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XP1017 Datasheet GaAs MMIC Power Amplifier

Manufacturer: Mimix Broadband

Overview: 30.0-36.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 P1017 Chip Device.

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Datasheet Details

Part number XP1017
Manufacturer Mimix Broadband
File Size 277.69 KB
Description GaAs MMIC Power Amplifier
Download XP1017 Download (PDF)

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 950 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF TAble4 MTTF Table 4 (4) Channel temperature affects a device's MTTF.

It is recommended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (ΔS21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical) Detector (diff ) Output at 20

Key Features

  • Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and.

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