XP1017-BD
Description
Mimix Broadband’s two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
