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XP1017 - GaAs MMIC Power Amplifier

Datasheet Summary

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 950 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF TAble4 MTTF Table 4 (4) Channel temperature affects a dev

Features

  • Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and.

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Datasheet Details

Part number XP1017
Manufacturer Mimix Broadband
File Size 277.69 KB
Description GaAs MMIC Power Amplifier
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30.0-36.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 P1017 Chip Device Layout Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.
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