Datasheet Summary
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007
- Rev 01-Feb-07
P1018-BD Chip Device Layout
Features
Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB pression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output pression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect...