Datasheet Details
| Part number | M5K4164AP-12 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 881.77 KB |
| Description | 64K-Bit DRAM |
| Download | M5K4164AP-12 Download (PDF) |
|
|
|
| Part number | M5K4164AP-12 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 881.77 KB |
| Description | 64K-Bit DRAM |
| Download | M5K4164AP-12 Download (PDF) |
|
|
|
This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities_ The M5K4164AP operates on a 5V power supply using the on-chip substrate bias generator_ PIN CONFIGURATION (TOP VIEW) REFRESH INPUT REF DATA INPUT WRITE CONTROL INPUT ROW ADDRESS STROBE INPUT ADDRESS INPUTS (WI Vee Vss (OV) 15 ...
CAS ~?~g~EN 1~~8fESS I• ...
MITSUBISHI LSI.
M5K4164AP-12, -15 65 536·BIT (65 536·WORD BY 1.
| Part Number | Description |
|---|---|
| M5K4164AP-15 | 64K-Bit DRAM |
| M5K4164AL-12 | 64K-BIT DYNAMIC RAM |
| M5K4164AL-15 | 64K-BIT DYNAMIC RAM |
| M5K4164AND-12 | 64K-Bit DRAM |
| M5K4164AND-15 | 64K-Bit DRAM |
| M5K4164ANL-12 | 64K-Bit DRAM |
| M5K4164ANL-15 | 64K-Bit DRAM |
| M5K4164ANP-12 | 64K-Bit DRAM |
| M5K4164ANP-15 | 64K-Bit DRAM |
| M5K4164ANP-20 | 64K-Bit DRAM |