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M5M4464P-15 Datasheet 256K-Bit DRAM

Manufacturer: Mitsubishi Electric

Download the M5M4464P-15 datasheet PDF. This datasheet also includes the M5M4464P-12 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M4464P-12-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

General Description

This is family of 65536-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-ca-pacity memory systems where high speed, low power dissipation, and low costs are essential.

The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation.

Multiplexed address inputs permit both a reduction in pins to the standard l8-pin package configuration and an increase in system densities.

Overview

MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC.

Key Features

  • Performance ranges Type name M5M4464P-12 M5M4464P-15 Access time (max) (ns) 120 150 Cycle time (min) Ins I 220 260 Power dissipation "ypl ImWI 260 230.
  • 65536 x 4 Organization.

More Datasheets from Mitsubishi Electric

Part Number Description
M5M4464P-12 256K-Bit DRAM
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M5M4416P-15 64K-Bit Dynamic Ram
M5M44170AJ-10 Fast Page Mode 4M-Bit DRAM
M5M44170AJ-10S Fast Page Mode 4M-Bit DRAM
M5M44170AJ-6 Fast Page Mode 4M-Bit DRAM
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M5M44170AJ-7 Fast Page Mode 4M-Bit DRAM
M5M44170AJ-7S Fast Page Mode 4M-Bit DRAM
M5M44170AJ-8 Fast Page Mode 4M-Bit DRAM