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M5M5Y816WG-85HI - 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

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General Description

The M5M5Y816 is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology .

The M5M5Y816 is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es.

M5M5Y816WG is packaged in a CSP (chip scale package), with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball) and ball pitch of 0.75mm.

Overview

2001.05.22 Ver.

0.1 MITSUBISHI LSIs Preliminary M5M5Y816WG -70HI, -85HI Notice: This is not a final specification.

Some parametric limits are subject to change.

Key Features

  • Single 1.65~2.3V power supply Small stand-by current: 0.5µA (2.0V, ty p. ) No clocks, No ref resh Data retention supply v oltage =1.3V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology : 0.18µm CMOS Package: 48ball 7.5mm x 8.5mm CSP Power Supply Access time max. 70ns Activ e current Icc1 25°C 40°C 25°C 40°C 70°C 85°C (2.3V, max) Stand-by c.

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