MGFK48G3745 Datasheet, HEMT, Mitsubishi

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MGFK48G3745 Features and benefits

* High voltage operation VDS=24V
* High output power Po=48.3dBm (TYP.) @Pin=42dBm
* High efficiency PAE=33% (TYP.) @Pin=42dBm
* Designed for use in Class .

MGFK48G3745 Application

OUTLINE DRAWING FEATURES
* High voltage operation VDS=24V
* High output power Po=48.3dBm (TYP.) @Pin=42dBm

MGFK48G3745 Description

The MGFK48G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications. OUTLINE DRAWING FEATURES
* High voltage operation VDS=24V
* High output power Po=48.3dBm (TYP.) @Pin=42dBm
* High efficiency PAE=33% (TYP.).

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