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MGFK48G3745 Datasheet Ku band internally matched power GaN HEMT

Manufacturer: Mitsubishi Electric

General Description

The MGFK48G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications.

OUTLINE DRAWING

Overview

< Ku band internally matched power GaN HEMT > MGFK48G3745 13.75 – 14.

Key Features

  • High voltage operation VDS=24V.
  • High output power Po=48.3dBm (TYP. ) @Pin=42dBm.
  • High efficiency PAE=33% (TYP. ) @Pin=42dBm.
  • Designed for use in Class AB linear amplifiers.