MGFK25V4045 Datasheet PDF (power GaAs FET) | Download Mitsubishi MGFK25V4045

MGFK25V4045 - power GaAs FET

Description

The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0

14.5 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

Internally matched to 50(ohm) system Flip-chip mounted.
High output power P1dB=0.3W (TYP. ) @f=14.0.
14.5GHz.
High linear power gain GLP=9.0dB (TYP. ) @f=14.0.
14.5GHz.
High power added efficiency P. A. E. =25% (TYP. ) @f=14.0.
14.5GHz.

Datasheet Details

Part number	MGFK25V4045
Manufacturer	Mitsubishi
File Size	114.07 KB
Description	power GaAs FET
Datasheet	MGFK25V4045 Datasheet
Additional preview pages of the MGFK25V4045 datasheet.

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Full PDF Text Transcription

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< X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=0.3W (TYP.) @f=14.0 – 14.5GHz  High linear power gain GLP=9.0dB (TYP.) @f=14.0 – 14.5GHz  High power added efficiency P.A.E.=25% (TYP.) @f=14.0 – 14.5GHz APPLICATION  14.0 – 14.

Published: Apr 29, 2005 |