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CM1200DB-34N - IGBT Module

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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DB-34N q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Motor control, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm 4(E1) 2(C2) C2 20±0.1 E1 4 2 G1 124±0.25 140±0.5 G2 C1 3(C1) 1(E2) E2 3 1 30±0.2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 6 - M4 NUTS 53±0.2 16±0.2 18±0.2 40±0.2 44±0.