CM1200E4C-34N Description
MITSUBISHI HVIGBT MODULES CM1200E4C-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200E4C-34N q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack (for brake) q AISiC Baseplate q Trench Gate IGBT.