CM1200DC-34N Datasheet | Mitsubishi Electric

.. MITSUBISHI HVIGBT MODULES 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N q IC 1200A q VCES 1700V q Insulated Type q 2-element in a Pack q AISi C Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm 4(E1) 2(C2) C2 20±0.1 E1 G1 124±0.25 140±0.5 G2 C1 3(C1) 1(E2) E2 30±0.2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM - M4 NUTS 53±0.2 16±0.2 18±0.2 40±0.2 44±0.2 57±0.2 - φ 7 MOUNTING HOLES 55.2±0.3 screwing depth min. 7.7 11.85±0.2 screwing depth min. 16.5 5±0.2 35±0.2 11.5±0.2 14±0.2 38 +1 - 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5±0.5 5±0.2...