CM1200DB-34N Description
MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DB-34N q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT.