CM1200E4C-34N Datasheet | Mitsubishi Electric

.. MITSUBISHI HVIGBT MODULES 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200E4C-34N q IC 1200A q VCES 1700V q Insulated Type q 1-element in a Pack (for brake) q AISi C Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, DC choppers, Dynamic braking choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm 4(C) C 2(A) 124±0.25 140±0.5 20±0.1 40±0.2 G E 3(E) 1(K) CIRCUIT DIAGRAM - M4 NUTS 10.65±0.2 48.8±0.2 10.35±0.2 - φ 7 MOUNTING HOLES 61.5±0.3 screwing depth min. 7.7 screwing depth min. 16.5 15±0.2 40±0.2 5.2±0.2 18±0.2 38 +1 - 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5±0.5 5±0.2 - 0 +1 MITSUBISHI HVIGBT MODULES 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED...