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M63850P - (M63850xP) 4-UNIT 1.5A DMOS ARRAY

Description

The M63850P/FP is a inverter input power DMOS transistor array that consists of 4 independent output N-channel DMOS transistors.

Features

  • 4 circuits of N-channels DMOS High breakdown voltage (VDS ≥ 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72Ω, @ = 1.25A) Wide operating temperature range (Ta =.
  • 40 to +85°C) IN2→ 6 NC 7 O2← 8 11 ←IN3 10 →O3 9 COM NC : No connection Package type 16P4(P) 16P2N(FP).

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Datasheet Details

Part number M63850P
Manufacturer Mitsubishi Electric
File Size 80.04 KB
Description (M63850xP) 4-UNIT 1.5A DMOS ARRAY
Datasheet download datasheet M63850P Datasheet
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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE PIN CONFIGURATION COM 1 O1← 2 IN1→ 3 GND 16 →O4 15 ←IN4 14 VDD 13 12 DESCRIPTION The M63850P/FP is a inverter input power DMOS transistor array that consists of 4 independent output N-channel DMOS transistors.    4 5  GND   FEATURES 4 circuits of N-channels DMOS High breakdown voltage (VDS ≥ 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72Ω, @ = 1.
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