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MGF0916A L & S BAND GaAs FET

MGF0916A Description

MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] .
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. High output power Po=23dBm(TYP.

MGF0916A Features

* High output power Po=23dBm(TYP. ) @f=1.9GHz,Pin=5dBm
* High power gain Gp=19dB(TYP. ) @f=1.9GHz
* High power added efficiency ηadd=30%(TYP. ) @f=1.9GHz,Pin=5dBm

MGF0916A Applications

* Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages result

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Datasheet Details

Part number
MGF0916A
Manufacturer
Mitsubishi Electric
File Size
73.11 KB
Datasheet
MGF0916A_MitsubishiElectric.pdf
Description
L & S BAND GaAs FET

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