MGF0916A
Description
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
Key Features
- High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
- High power gain Gp=19dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm
- Hermetic Package
