MGF0917A
MGF0917A is L & S BAND GaAs FET manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR<GaAs FET>
L & S BAND GaAs FET [ SMD non
- matched ]
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
Features
- High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
- High power gain Gp=21dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=4dBm
- Hermetic Package
APPLICATION
- For UHF Band power amplifiers
Fig.1
QUALITY
- GG
REMENDED BIAS CONDITIONS
- Vds=10V
- Ids=75mA
- Rg=2kΩ
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)...
