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MGF0917A - L & S BAND GaAs FET

General Description

The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Key Features

  • High output power Po=24dBm(TYP. ) @f=1.9GHz,Pin=4dBm.
  • High power gain Gp=21dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=38%(TYP. ) @f=1.9GHz,Pin=4dBm.
  • Hermetic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm • High power gain Gp=21dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=4dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=75mA • Rg=2kΩ Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25°C) Absolute maximum ratings www.DataSheet4U.