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MGF0916A Datasheet L & S Band Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched.

General Description

The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Key Features

  • High output power Po=23dBm(TYP. ) @f=1.9GHz,Pin=5dBm.
  • High power gain Gp=19dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=30%(TYP. ) @f=1.9GHz,Pin=5dBm.
  • Hermetic Package.

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MGF0916A Distributor