MGF0916A Description
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0916A Key Features
- High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
- High power gain Gp=19dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm
- Hermetic Package
- For UHF Band power amplifiers
- Vds=6V
- Ids=100mA
- Rg=1kΩ
- 01:Tape & Reel(1K), -03:Trai(50pcs)