MGF0916A
MGF0916A is L & S BAND GaAs FET manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR<GaAs FET>
L & S BAND GaAs FET [ SMD non
- matched ]
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
Features
- High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
- High power gain Gp=19dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm
- Hermetic Package
APPLICATION
- For UHF Band power amplifiers
Fig.1
QUALITY
- GG
REMENDED BIAS CONDITIONS
- Vds=6V
- Ids=100mA
- Rg=1kΩ
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)...
