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MGF0916A - L & S BAND GaAs FET

General Description

The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Key Features

  • High output power Po=23dBm(TYP. ) @f=1.9GHz,Pin=5dBm.
  • High power gain Gp=19dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=30%(TYP. ) @f=1.9GHz,Pin=5dBm.
  • Hermetic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm • High power gain Gp=19dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=6V • Ids=100mA • Rg=1kΩ Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25°C) Absolute maximum ratings www.DataSheet4U.