Datasheet4U Logo Datasheet4U.com

MGF0915A - L & S BAND GaAs FET

General Description

The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Key Features

  • High output power Po=36.5 dBm(TYP. ) @f=1.9GHz,Pin=23dBm.
  • High power gain Gp=14.5 dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=50 %(TYP. ) @f=1.9GHz,Pin=23dBm.
  • Hermetic Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MGF0910A High-power GaAs FET Mitsubishi
MGF0911A L / S BAND POWER GaAs FET Mitsubishi
MGF0918A L & S BAND GaAs FET [ SMD non - matched ] Mitsubishi
MGF0919A L & S BAND GaAs FET [ SMD non matched ] Mitsubishi
MGF0904A High-power GaAs FET Mitsubishi

Other Datasheets by Mitsubishi Electric

Part Number Description
MGF0912A L & S BAND GaAs FET
MGF0913A L & S BAND GaAs FET
MGF0916A L & S BAND GaAs FET
MGF0917A L & S BAND GaAs FET
MGF0951P L & S BAND GaAs FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI SEMICONDUCTOR MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm • High power gain Gp=14.5 dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers QUALITY • GG Fig.1 • Ids=800 mA • Rg=100Ω RECOMMENDED BIAS CONDITIONS • Vds=10V Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25°C) Absolute maximum ratings www.DataSheet4U.com Symbol VGSO Parameter Gate to sourcebreakdown voltage Ratings -15 -15 3000 -10 21 18.