MGF0915A
MGF0915A is L & S BAND GaAs FET manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR<GaAs FET>
L & S BAND GaAs FET [ SMD non
- matched ]
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
Features
- High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm
- High power gain Gp=14.5 dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm
- Hermetic Package
APPLICATION
- For UHF Band power amplifiers
QUALITY
- GG
Fig.1
- Ids=800 mA
- Rg=100Ω
REMENDED BIAS CONDITIONS
- Vds=10V
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)...
