MGF0951P
MGF0951P is L & S BAND GaAs FET manufactured by Mitsubishi Electric.
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MITSUBISHI SEMICONDUCTOR<GaAs FET>
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
Features
- High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
- High power gain Glp=13dB(TYP.) @f=2.15GHz
- High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm
- Plastic Mold Lead-less PKG
APPLICATION
- For L/S Band power amplifiers
Fig.1
QUALITY
- GG
REMENDED BIAS CONDITIONS
- Vds=10V
- Ids=200mA
- Rg=500Ω
Delivery
Tape & Reel(1.5K)
(Ta=25°C)...
