MGF0951P Description
The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
MGF0951P Key Features
- High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
- High power gain Glp=13dB(TYP.) @f=2.15GHz
- High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm
- Plastic Mold Lead-less PKG
- For L/S Band power amplifiers
- Vds=10V
- Ids=200mA
- Rg=500Ω