MGF0953P Description
The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
MGF0953P Key Features
- High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
- High power gain Gp=16.5dB(TYP.) @f=2.15GHz
- High power added efficiency add=40%(TYP.) @f=2.15GHz,Pin=10dBm
- Plastic Mold Lead
- less Package
- For L/S Band power amplifiers
- Vds=10V
- Ids=0.15A
- Rg=1000