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MGF0953P Datasheet High-power Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.

General Description

The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

Key Features

  • High output power Po=28.0dBm(TYP. ) @f=2.15GHz,Pin=10dBm.
  • High power gain Gp=16.5dB(TYP. ) @f=2.15GHz.
  • High power added efficiency add=40%(TYP. ) @f=2.15GHz,Pin=10dBm.
  • Plastic Mold Lead.
  • less Package.

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