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MGF0953P - High-power GaAs FET

General Description

The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

Key Features

  • High output power Po=28.0dBm(TYP. ) @f=2.15GHz,Pin=10dBm.
  • High power gain Gp=16.5dB(TYP. ) @f=2.15GHz.
  • High power added efficiency add=40%(TYP. ) @f=2.15GHz,Pin=10dBm.
  • Plastic Mold Lead.
  • less Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES  High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm  High power gain Gp=16.5dB(TYP.) @f=2.15GHz  High power added efficiency add=40%(TYP.) @f=2.15GHz,Pin=10dBm  Plastic Mold Lead – less Package APPLICATION  For L/S Band power amplifiers QUALITY  GG RECOMMENDED BIAS CONDITIONS  Vds=10V  Ids=0.15A  Rg=1000 Delivery Tape & Reel(1.5K) Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGSO Gate to source breakdown voltage -15 VGDO Gate to drain breakdown voltage -15 ID Drain current 0.4 IGR Reverse gate current -1.