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MGF0912A - L & S BAND GaAs FET

General Description

The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

Key Features

  • High output power Po=41.5dBm(TYP. ) @f=1.9GHz,Pin=33dBm.
  • High power gain Gp=10.5dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=38%(TYP. ) @f=1.9GHz,Pin=33dBm.
  • Hermetic Package ‡A ƒÓ2.2 0.6.
  • }0.2 ‡B ‡A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAWING Unit : millimeters FEATURES • High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm • High power gain Gp=10.5dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm • Hermetic Package ‡A ƒÓ2.2 0.6•}0.2 ‡B ‡A APPLICATION • For L/S Band power amplifiers QUALITY • GG • Vds=10V • Ids=2.6A • Rg=50Ω 9.0•}0.2 (Ta=25°C) www.DataSheet4U.com Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg 14.0 0.65 Delivery Tray 1.650.1 RECOMMENDED BIAS CONDITIONS 5.