MGF0912A
MGF0912A is L & S BAND GaAs FET manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR<GaAs FET>
L & S BAND GaAs FET [ non
- matched ]
DESCRIPTION
The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
OUTLINE DRAWING
Unit : millimeters
Features
- High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
- High power gain Gp=10.5dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm
- Hermetic Package
‡A
ƒÓ2.2
0.6- }0.2 ‡B
‡A
APPLICATION
- For L/S Band power amplifiers
QUALITY
- GG
- Vds=10V
- Ids=2.6A
- Rg=50Ω
9.0- }0.2
(Ta=25°C)
.....
