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MGF0952P - L & S BAND GaAs FET

General Description

The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

Key Features

  • High output power Po=36.5dBm(TYP. ) @f=2.15GHz,Pin=25Bm.
  • High power gain Glp=13.5dB(TYP. ) @f=2.15GHz.
  • High power added efficiency ηadd=50%(TYP. ) @f=2.15GHz,Pin=25dBm.
  • Plastic Mold Lead-less PKG.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm • High power gain Glp=13.5dB(TYP.) @f=2.15GHz • High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=25dBm • Plastic Mold Lead-less PKG APPLICATION • For L/S Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=700mA • Rg=100Ω Delivery Tape & Reel(1.