MGF0952P Description
The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
MGF0952P Key Features
- High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm
- High power gain Glp=13.5dB(TYP.) @f=2.15GHz
- High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=25dBm
- Plastic Mold Lead-less PKG
- For L/S Band power amplifiers
- Vds=10V
- Ids=700mA
- Rg=100Ω