MGFC41V7177
MGFC41V7177 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
< C band internally matched power GaAs FET >
- 7.7 GHz BAND / 12W
DESCRIPTION
The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1
- 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
Features
Class A operation Internally matched to 50(ohm) system
- High output power
P1dB=12W (TYP.) @f=7.1
- 7.7GHz
- High power gain
GLP=9.5dB (TYP.) @f=7.1
- 7.7GHz
- High power added efficiency
P.A.E.=33% (TYP.) @f=7.1
- 7.7GHz
- Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=30dBm S.C.L.
APPLICATION
- item 01 : 7.1
- 7.7 GHz band power amplifier
QUALITY
- IG
OUTLINE DRAWING
Unit:...
