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RA60H4452M1 Datasheet, Mitsubishi Electric

RA60H4452M1 Datasheet, Mitsubishi Electric

RA60H4452M1

datasheet Download (Size : 229.50KB)

RA60H4452M1 Datasheet

RA60H4452M1 modules equivalent, silicon rf power modules.

RA60H4452M1

datasheet Download (Size : 229.50KB)

RA60H4452M1 Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 440-520MHz

Description

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VG.

Image gallery

RA60H4452M1 Page 1 RA60H4452M1 Page 2 RA60H4452M1 Page 3

TAGS

RA60H4452M1
Silicon
Power
Modules
Mitsubishi Electric

Manufacturer


Mitsubishi Electric

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