RD00HHS1 compliance equivalent, rohs compliance.
High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATIO.
TYPE NAME
FEATURES
High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
0.4 +0.03.
Silicon MOSFET Power Transistor 30MHz,0.3W
OUTLINE DRAWING
1.5+/-0.1
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.
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