RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
Key Features
High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm.
Full PDF Text Transcription for RD00HHS1 (Reference)
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RD00HHS1. For precise diagrams, and layout, please refer to the original PDF.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0. 1 RoHS Compliance, D...
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+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0. 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING 1.5+/-0.1 RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. TYPE NAME FEATURES High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS compliant products. This product include th
RD00HHS1 Datasheet
