RD01MUS1 Datasheet, fet equivalent, Mitsubishi Electric

RD01MUS1 Features

• Fet High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRA

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RD01MUS1

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Mitsubishi Electric

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📄 Datasheet

Description:

Silicon rf power mos fet. Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS1 is a MOS FET type transistor specifically designed for

RD01MUS1 Application

• Applications TYPE NAME FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1

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RD01MUS1

Mitsubishi Electric

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