RD01MUS1 fet equivalent, silicon rf power mos fet.
High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 :.
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High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.
0.8 MIN 2.5+/-0.1
.
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