logo

MGF4934CM Datasheet, Mitsubishi Electric Semiconductor

MGF4934CM hemt equivalent, super low noise ingaas hemt.

MGF4934CM Avg. rating / M : 1.0 rating-11

datasheet Download

MGF4934CM Datasheet

Features and benefits

Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 13.0dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise ampl.

Application

Please be aware, however, that the technical information contained in these materials does not comprise consent for the.

Description

The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12.

Image gallery

MGF4934CM Page 1 MGF4934CM Page 2 MGF4934CM Page 3

TAGS

MGF4934CM
SUPER
LOW
NOISE
InGaAs
HEMT
MGF4934AM
MGF4934BM
MGF4931AM
Mitsubishi Electric Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts