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MGF4941AL - SUPER LOW NOISE InGaAs HEMT

Description

The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.

Features

  • Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ. ) High associated gain @ f=12GHz Gs = 13.5dB (Typ. ) Fig.1.

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Datasheet Details

Part number MGF4941AL
Manufacturer Mitsubishi Electric Semiconductor
File Size 149.68 KB
Description SUPER LOW NOISE InGaAs HEMT
Datasheet download datasheet MGF4941AL Datasheet
Additional preview pages of the MGF4941AL datasheet.

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18/May/2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION L to K band low noise amplifiers QUALITY GRADE GG GD-32 RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERING INFORMATION Tape & reel 4000pcs.
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