MGF4963BL
MGF4963BL is Low Noise GaAs HEMT manufactured by Mitsubishi Electric.
< Low Noise GaAs HEMT >
Micro-X type plastic package
DESCRIPTION
The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
Outline Drawing
Features
Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric
REMENDED BIAS CONDITIONS
VDS=2V, ID=10mA
ORDERRING INFORMATION
Tape & reel 4000pcs./reel
.DataSheet.net/
RoHS PLIANT
MGF4963BL is a RoHS pliant product. RoHS pliance is indicated by the...
