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MGF4964BL - Low Noise GaAs HEMT

Description

The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Features

  • Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) Fig.1.

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Datasheet preview – MGF4964BL

Datasheet Details

Part number MGF4964BL
Manufacturer Mitsubishi Electric
File Size 287.01 KB
Description Low Noise GaAs HEMT
Datasheet download datasheet MGF4964BL Datasheet
Additional preview pages of the MGF4964BL datasheet.

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< Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA ORDERRING INFORMATION Tape & reel 4000pcs./reel www.DataSheet.net/ RoHS COMPLIANT MGF4964BL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
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