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MGF4963BL Datasheet Low Noise GaAs HEMT

Manufacturer: Mitsubishi Electric

Overview: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package.

General Description

The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Outline Drawing

Key Features

  • Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) Fig.1.

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