Datasheet4U Logo Datasheet4U.com

MGF4963BL - Low Noise GaAs HEMT

Description

The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Features

  • Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) Fig.1.

📥 Download Datasheet

Datasheet preview – MGF4963BL

Datasheet Details

Part number MGF4963BL
Manufacturer Mitsubishi Electric
File Size 291.44 KB
Description Low Noise GaAs HEMT
Datasheet download datasheet MGF4963BL Datasheet
Additional preview pages of the MGF4963BL datasheet.
Other Datasheets by Mitsubishi Electric Semiconductor

Full PDF Text Transcription

Click to expand full text
< Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA ORDERRING INFORMATION Tape & reel 4000pcs./reel www.DataSheet.net/ RoHS COMPLIANT MGF4963BL is a RoHS compliant product. RoHS compliance is indicated by the letter ā€œGā€ after the Lot Marking.
Published: |