RA08H1317M modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
* ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin.
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate vol.
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