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RA13H4047M-E01 Datasheet, Mitsubishi Electric Semiconductor

RA13H4047M-E01 Datasheet, Mitsubishi Electric Semiconductor

RA13H4047M-E01

datasheet Download (Size : 85.84KB)

RA13H4047M-E01 Datasheet

RA13H4047M-E01 radio equivalent, mitsubishi rf mosfet module 400-470mhz 13w 12.5v/ 2 stage amp. for mobile radio.

RA13H4047M-E01

datasheet Download (Size : 85.84KB)

RA13H4047M-E01 Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 400-470MHz

Description

The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG.

Image gallery

RA13H4047M-E01 Page 1 RA13H4047M-E01 Page 2 RA13H4047M-E01 Page 3

TAGS

RA13H4047M-E01
MITSUBISHI
MOSFET
MODULE
400-470MHz
13W
12.5V
Stage
Amp.
For
MOBILE
RADIO
Mitsubishi Electric Semiconductor

Manufacturer


Mitsubishi Electric Semiconductor

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