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< Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
12.3+/-0.6 3.2+/-0.4
4.8MAX 9+/-0.4
FEATURES
High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz
High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
12.3MIN
1.2+/-0.4 0.8+0.10/-0.15
123
2.5 2.5
0.5+0.10/-0.15
3.1+/-0.6 4.5+/-0.5
5deg
PINS
1:GAT E
9.5MAX
2:SOURCE
note: 3:DRAIN
Torelance of no designation means typical value.
Dimension in mm.
RD15HVF1 Datasheet
