RD15HVF1 transistor equivalent, silicon mosfet power transistor.
High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz
High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode
APPLICATION
For output stage .
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
12.3+/-0.6 3.2+/-0.4
4.8MAX 9+/-0.4
FEATURES
High power and High Gain: Pout>15 W, Gp>14.
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