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2N5631 - Power Transistor

This page provides the datasheet information for the 2N5631, a member of the 2N5630 Power Transistor family.

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Datasheet Details

Part number 2N5631
Manufacturer Motorola
File Size 252.86 KB
Description Power Transistor
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc — 2N5630, 2N6030 VCEO(sus) = 140 Vdc — 2N5631, 2N6031 • High DC Current Gain — @ IC = 8.0 Adc hFE = 20 (Min) — 2N5630, 2N6030 hFE = 15 (Min) — 2N5631, 2N6031 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Low Collector–Emitter Saturation Voltage — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.
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