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2N5796 - DUAL TRANSISTOR

Download the 2N5796 datasheet PDF. This datasheet also covers the 2N5795 variant, as both devices belong to the same dual transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5795-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5795 2N5796 JAN, JTX, JTXV AVAILABLE CASE 654-07, STYLE 1 DUAL TRANSISTOR PNP SILICON Refer to MD2904,A for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T"a = 25°C Derate above 25°C @Total Power Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO "C PD Pd Tj, Tstg Value 60 60 5.0 600 One Die 500 2.9 Both Die Equal Power 600 3.4 1.2 2.0 6.9 11.43 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.