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Motorola Electronic Components Datasheet

2N6341 Datasheet

NPN Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6338/D
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and switching circuit
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — 2N6338
VCEO(sus) = 120 Vdc (Min) — 2N6339
VCEO(sus) = 140 Vdc (Min) — 2N6340
VCEO(sus) = 150 Vdc (Min) — 2N6341
High DC Current Gain —
hFE = 30 – 120 @ IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max)
tf = 0.25 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Complement to 2N6436–38
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
Symbol
VCB
VCEO
VEB
IC
IB
PD
TJ, Tstg
2N6338
120
100
2N6339 2N6340
140
160
120
140
6.0
25
50
10
200
1.14
– 65 to + 200
2N6341
180
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data.
Symbol
θJC
Max
0.875
Unit
_C/W
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
175 200
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
2N6338
2N6339
2N6340
2N6341*
*Motorola Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
1


Motorola Electronic Components Datasheet

2N6341 Datasheet

NPN Transistor

No Preview Available !

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N6338 2N6339 2N6340 2N6341
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 mAdc, IB = 0)
2N6338 VCEO(sus)
100
2N6339
120
2N6340
140
2N6341
150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 60 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 70 Vdc, IB = 0)
(VCE = 75 Vdc, IB = 0)
ICEO
2N6338
2N6339
2N6340
2N6341
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCB = Rated VCB, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
ICBO
IEBO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 0.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, VCE = 2.0 Vdc)
(IC = 25 Adc, VCE = 2.0 Vdc)
hFE
50
30
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 25 Adc, IB = 2.5 Adc)
VCE(sat)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
VBE(on)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current–Gain — Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
fT
40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
tr
ts
tf
Max
Unit
Vdc
µAdc
50
50
50
50
10
µAdc
1.0
mAdc
10
µAdc
100
µAdc
120
Vdc
1.0
1.8
Vdc
1.8
2.5
1.8
Vdc
MHz
300
pF
0.3
µs
1.0
µs
0.25
µs
v v * Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| ftest.
VCC
1000
700
+ 80 V
500
RC
8.0 OHMS
300
10 µs
+ 11 V
RB
10 OHMS
SCOPE
200
0
100
70
1N4933
– 9.0 V
50
v tr, tf 10 ns
DUTY CYCLE = 1.0%
– 5.0 V
30
20
td @ VBE(off) = 6.0 V
tr
VCC = 80 V
IC/IB = 10
TJ = 25°C
NOTE: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test conditions.
Figure 2. Switching Time Test Circuit
10
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
20 30
2
Motorola Bipolar Power Transistor Device Data


Part Number 2N6341
Description NPN Transistor
Maker Motorola
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2N6341 Datasheet PDF






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