2N6341 - NPN Transistor

This page provides the datasheet information for the 2N6341, a member of the 2N6338 NPN Transistor family.

Motorola

Datasheet Details

Part number	2N6341
Manufacturer	Motorola
File Size	154.50 KB
Description	NPN Transistor
Datasheet	2N6341 Datasheet
Additional preview pages of the 2N6341 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 • High DC Current Gain — hFE = 30 – 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.

Published: Jul 5, 2020 |