2N6341
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6338/D
High-Power NPN Silicon Transistors
. . . designed for use in industrial- military power amplifier and switching circuit applications.
- High Collector- Emitter Sustaining Voltage
- VCEO(sus) = 100 Vdc (Min)
- 2N6338 VCEO(sus) = 120 Vdc (Min)
- 2N6339 VCEO(sus) = 140 Vdc (Min)
- 2N6340 VCEO(sus) = 150 Vdc (Min)
- 2N6341
- High DC Current Gain
- h FE = 30
- 120 @ IC = 10 Adc h FE = 12 (Min) @ IC = 25 Adc
- Low Collector- Emitter Saturation Voltage
- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
- Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.25 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
- plement to 2N6436- 38
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
- MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Emitter Voltage
Emitter- Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...
