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2N656 Datasheet

NPN Transistor

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2N656 (SILICON)
2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier
and general purpose switching applications.
• High Collector·Emitter Breakdown Voltage -
BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657
• High Emitter-Base Breakdown Voltage -
BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde
NPN SILICON
ANNULAR TRAN~STORS
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation @ T A - 2SoC
Derate above 2SoC
Total Device Dissipation @ Teo:: 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
PD
PD
TJ,Tstg
2N656 2N657
60 100
60 100
8.0
1.0
5.7
4.0
22.B
-65 to +200
Unit
Vde
Vde
Vde
Watt
mW/oC
Watts
mW/oC
°c
*ElECTR ICAl CHARACTER ISTICS (TA = 25°C unless otherwise noted 1
Characteristic
Symbol Min
Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
lie = 250~Ade, IB = 01
Collector-Base Breakdown Voltage
(lC = 100~Ade, IE = 01
Emitter-Base Breakdown Voltage
liE = 250~Ade, IC = 01
Collector Cutoff Current
(VCB = 30 Vde, IE = 01
2N656
2N657
2N656
2N657
BVCEO
BVCBO
BVEBO
ICBO
60
100
60
100
B.O
-
-
-
-
-
-
10
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 200 mAde, VCE = 10 Vdel
Collector-Emitter Saturation Voltage(1)
lic = 200 mAde, IB = 40 mAdel
hFE 30
VCE(satl
-
90
4.0
SMALL·SIGNAL CHARACTERISTICS
Input Impedance(1)
liB =8.0 mAde, VCE = 10 Vdel
Unit
Vde
Vde
Vde
~Ade
-
Vde
*Indicates JEDEC Registered Data.
(1)Pulse Test: Pulse Length = 300 MS, Duty Cycle '$ 2.0%.
2-56
::"wj1=1-+---10Q.l33Q37.50~
OIA
DIA
~Ii
0.240
H.·.
I0019
15
~ILJ
CASE 31
ITO-5)


Part Number 2N656
Description NPN Transistor
Maker Motorola
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2N656 Datasheet PDF






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