* nded or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal inju
MGP11N60E Datasheet (123.52 KB)
MGP11N60E
Motorola
123.52 KB
Insulated gate bipolar transistor.
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP11N60E/D Insulated Gate Bipolar Transistor N Channel Enhancement.
📁 Related Datasheet
MGP11N60ED Insulated Gate Bipolar Transistor (Motorola)
MGP14N60E Insulated Gate Bipolar Transistor (Motorola)
MGP15N35CL Internally Clamped N-Channel IGBT (ON)
MGP15N38CL Internally Clamped N-Channel IGBT (Motorola)
MGP15N40CL Internally Clamped N-Channel IGBT (ON)
MGP15N43CL Internally Clamped N-Channel IGBT (Motorola)
MGP15N60U Insulated Gate Bipolar Transistor (Motorola)
MGP19N35CL IGBT (ON Semiconductor)
MGP20N14CL Internally Clamped / N-Channel IGBT (Motorola)
MGP20N35CL SMARTDISCRETES Internally Clamped / N-Channel IGBT (Motorola)
