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MMBR5031
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO vCBO v EBO
'C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T^ = 25°C Derate above 25°C
Symbol PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R&JA
mm•Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage Ug = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (|C = 0.01 mAdc, lg = 0)
Emitter-Base Breakdown Voltage (IE = 0-01 mAdc, cl = 0)
Collector Cutoff Current
(VCB = 6.
MMBR5031 Datasheet
