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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT2222LT1/D
General Purpose Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT2222LT1 MMBT2222ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2222 30 60 5.0 600 2222A 40 75 6.0
2 EMITTER
1
3
Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
MMBT2222ALT1 Datasheet
