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Motorola Electronic Components Datasheet

MPSW92 Datasheet

One Watt High Voltage Transistor

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MPSW92 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW92/D
One Watt High Voltage Transistor
PNP Silicon
COLLECTOR
3
2
BASE
MPSW92
Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–300
–300
–5.0
–500
1.0
8.0
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
23
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min Max Unit
–300
–300
–5.0
–0.25
–0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


Motorola Electronic Components Datasheet

MPSW92 Datasheet

One Watt High Voltage Transistor

No Preview Available !

MPSW92 pdf
MPSW92
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
hFE
VCE(sat)
25
40
25
–0.5 Vdc
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VBE(sat)
–0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
fT 50 — MHz
Collector–Base Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Ccb — 6.0 pF
200
VCE = –10 V
100
70
50
TJ = 125°C
25°C
–55°C
30
20
–1.0
–2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
–0.7
–0.6 IC = –20 mA
IC = –30 mA
TJ = 25°C
–0.5
–0.4
–0.3
IC = –10 mA
–0.2
–0.1
0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20 –30
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSW92
Description One Watt High Voltage Transistor
Maker Motorola
Total Page 4 Pages
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