MRF1535FT1 transistors equivalent, rf power field effect transistors.
155 175 Zin Ω 5.0 + j0.9 5.0 + j0.9 3.0 + j1.0 ZOL* Ω 1.7 + j0.2 1.7 + j0.2 1.3 + j0.1
VDD = 12.5 V, IDQ = 500 mA, Pout = 35 W f MHz 450 470 500 520 Zin Ω 0.8
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with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large
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