MRF1535FT1 - RF Power Field Effect Transistors

Features

Ω 5.0 + j0.9 5.0 + j0.9 3.0 + j1.0 ZOL.
Ω 1.7 + j0.2 1.7 + j0.2 1.3 + j0.1 VDD = 12.5 V, IDQ = 500 mA, Pout = 35 W f MHz 450 470 500 520 Zin Ω 0.8.
j1.4 0.9.
j1.4 1.0.
j1.4 0.9.
j1.4 ZOL.
Ω 1.0.
j0.8 1.1.
j0.6 1.1.
j0.6 1.1.
j0.5 Zin = Complex co.

Motorola

Datasheet Details

Part number	MRF1535FT1
Manufacturer	Motorola
File Size	591.86 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF1535FT1 Datasheet
Additional preview pages of the MRF1535FT1 datasheet.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1535T1/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.

Published: Apr 19, 2006 |