MRF1535FT1
( Data Sheet : .. )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect Transistors
Designed for broadband mercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon source amplifier applications in 12.5 volt mobile FM equipment.
- Specified Performance @ 520 MHz, 12.5 Volts Output Power
- 35 Watts Power Gain
- 10.0 d B Efficiency
- 50%
- Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 d B Overdrive
- Excellent Thermal Stability
- Characterized with Series Equivalent Large- Signal Impedance Parameters
- Broadband- Full Power Across the Band: 135- 175 MHz 400- 470 MHz 450- 520 MHz
- Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request
- In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
N- Channel Enhancement- Mode Lateral MOSFETs
MRF1535T1 MRF1535FT1
520 MHz, 35 W, 12.5 V LATERAL N-...