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Motorola Electronic Components Datasheet

MRF18090B Datasheet

LATERAL N-CHANNEL RF POWER MOSFETs

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
www.DataShCeaept4aUb.lceoomf Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF18090B
MRF18090BS
1.90 – 1.99 GHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETS
CASE 465B–03, STYLE 1
(NI–880)
(MRF18090B)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465C–02, STYLE 1
(NI–880S)
(MRF18090BS)
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Class
2 (Minimum)
M3 (Minimum)
Max
0.7
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
© MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF18090B MRF18090BS
1


Motorola Electronic Components Datasheet

MRF18090B Datasheet

LATERAL N-CHANNEL RF POWER MOSFETs

No Preview Available !

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
www.Da(tVaDSShe=e1t04UV.dcco,mID = 3 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 – 1990 MHz)
V(BR)DSS
65
— Vdc
IDSS
10 µAdc
IGSS
1 µAdc
VGS(Q)
2.5
3.7
4.5
Vdc
VDS(on)
0.1
Vdc
gfs — 7.2 — S
Crss — 4.2 — pF
Gps dB
12 13.5 —
η%
40 45 —
IRL dB
— — –10
Output Mismatch Stress
Ψ No Degradation In Output Power
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Before and After Test
(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch
consistency.
MRF18090B MRF18090BS
2
MOTOROLA RF DEVICE DATA


Part Number MRF18090B
Description LATERAL N-CHANNEL RF POWER MOSFETs
Maker Motorola
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MRF18090B Datasheet PDF






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