MRF18090BS - LATERAL N-CHANNEL RF POWER MOSFETs

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Datasheet Details

Part number	MRF18090BS
Manufacturer	Motorola
File Size	201.46 KB
Description	LATERAL N-CHANNEL RF POWER MOSFETs
Datasheet	MRF18090BS Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness www.DataSheet4U.

Published: May 31, 2010 |