* = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 12.5 IMD Gps -30 -35 1990 2000 12 1920 1930 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATIO
MRF19125SR3 Datasheet (402.21 KB)
MRF19125SR3
Motorola
402.21 KB
Rf sub-micron mosfet line n-channel enhancement-mode lateral mosfets.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub Micron MOSFET Line www.DataSheet4U.com RF Power Field E.
📁 Related Datasheet
MRF19125S RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
MRF19125 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
MRF19125R3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF19120 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19120S RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors (Motorola)
MRF19030LSR3 The RF MOSFET Line RF Power Field Effect Transistors (Motorola)
MRF19030R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19030SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Motorola)
TAGS
Image Gallery
