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MRF373AR1 - RF Power Field Effect Transistors

General Description

18 pF Chip Capacitors, B Case, ATC 12 pF Chip Capacitor, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 51 pF Chip Capacitors, B Case, ATC 0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS) 15 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitor, B Case,

Key Features

  • r product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P. O. Box 5405, Denver, Colorado 80217. 1.
  • 303.
  • 675.
  • 2140 or 1.
  • 800.
  • 441.
  • 2447 JAPAN: Motorola Japan Ltd. ; SPS, Tech.

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Full PDF Text Transcription for MRF373AR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF373AR1. For precise diagrams, and layout, please refer to the original PDF.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Des...

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ield Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

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