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MRF373R1 - RF Power Field Effect Transistors

Key Features

  • ully inserted. Ground Input (50 ohm microstrip) 55 mil slot cut out to accept Balun Figure 10. MRF373SR1 Broadband Push.
  • Pull Component Layout.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF373 The RF MOSFET Line RF Power Field Effect Transistors
MRF373AR1 RF Power Field Effect Transistors
MRF373ASR1 RF Power Field Effect Transistors
MRF373S The RF MOSFET Line RF Power Field Effect Transistors
MRF373SR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment. • Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50% • Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) Power Gain – 11.