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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.